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《半导体物理电子学（第二版）》英文影印版由德国施普林格出版公司授权出版。未经出版者书面许可，不得以任何方式复制或抄袭《半导体物理电子学（第二版）》的任何部分。《半导体物理电子学（第二版）》仅限在中华人民共和同销售，小得出口。版权所有，翻印必究。

Contents

Preface iii

1.Classification of Solids and Crystal Structure

1.1 Introduction 1

1.2 The Bravais Lattice 2

1.3 The Crystal Structure 6

1.4 Miller Indices and Crystal Planes 9

1.5 The Reciprocal Lattice and Brillouin Zone 11

1.6 Types of Crystal Bindings 14

1.7 Defects in a Crystalline Solid 18

Problems 23

Bibliography 24

2.Lattice Dynamics 26

2.1 Introduction 26

2.2 The One-Dimensional Linear Chain 27

2.3 Dispersion Relation for a Three-Dimensional Lattice 33

2.4 The Concept of Phonons 36

2.5 The Density of States and Lattice Spectrum 37

2.6 Lattice Specific Heat 39

Problems 42

References 44

Bibliography 44

3.Semiconductor Statistics 45

3.1 Introduction 45

3.2 Maxwell-Boltzmann Statistics 46

3.3 Fermi-Dirac Statistics 50

3.4 Bose-Einstein Statistics 56

3.5 Statistics for the Shallow-Impurity States in a Semiconductor 57

Problems 59

Bibliography 60

4.Energy Band Theory 61

4.1 Introduction 61

4.2 Basic Quantum Concepts and Wave Mechanics 62

4.3 The Bloch-Floquet Theorem 66

4.4 The Kronig-Penney Model 67

4.5τbe Nearly Free Electron Approximation 74

4.6 The Tight-Binding Approximation 80

4.7 Energy Band Structures for Some Semiconductors 86

4.8 The Effective Mass Concept for Electrons and Holes 93

4.9 Energy Band Structures and Density of States for Low-Dimensional Systems 96

Problems 101

References 103

Bibliography 103

5.Equilibrium Properties of Semiconductors 105

5.1 Introduction 105

5.2 Densities of Electrons and Holes in a Semiconductor 106

5.3 Intrinsic Semiconductors 113

5.4 Extrinsic Semiconductors 116

5.5 lonization Energies of Shallow- and Deep-Level Impurities 123

5.6 Hall Effect， Electrical Conductivity， and Ha11 Mobility 125

5.7 Heavy Doping Effects in a Degenerate Semiconductor 128

Problems 130

References 132

Bibliography 133

6.Excess Carrier Phenomenon in Semiconductors 134

6.1 Introduction 134

6.2 Nonradiative Recombination: The Shockley-Read-Hall Model 135

6.3 Band-to-Band Radiative Recombination 140

6.4 Band-to-Band Auger Recombination 142

6.5 Basic Semiconductor Equations 146

6.6 The Charge-Neutrality Equation 149

6.7 The Haynes-Shockley Experiment 151

6.8 The Photoconductivity Decay Experiment 154

6.9 Surface States and Surface Recombination Velocity 159

6.10 Deep-Level Transient Spectroscopy Technique 162

6.11 Surface Photovoltage Technique 165

Problems 169

References 170

Bibliography 170

7.Transport Pr.eperties of Semiconductors 171

7.1 Introduction 171

7.2 Galvanomagnetic， Thermoelectric， and Thermomagnetic Effects 173

7.3 Boltzmann Transport Equation 180

7.4 Derivation of Transport Coefficients for n-type Semiconductors 182

7.5 Transport Coefficients for the Mixed Conduction Case 195

7.6 Transport Coefficients for Some Semiconductors 198

Problems 208

References 209

Bibliography 210

8.Scattering Mechanisms and Carrier Mobilities in Serniconductors 211

8.1 Introduction 211

8.2 Differential Scattβring Cross-Section 214

8.3 lonized Impurity Scattering 217

8.4 Neutral Impurity Scattering 221

8.5 Acoustical Phonon Scattering 222

8.6 Optical Phonon Scattering 228

8.7 Scattering by Dislocations 230

8.8 Electron and Hole Mobilities in Serniconductors 231

8.9 Hot-Electron Effects in a Semiconductor 239

Problems 243

References 244

Bibliography 244

9.Optical Properties and Photoelectric Effects 246

9.1 Introduction 246

9.2 Optical Constants of a Solid 247

9.3 Free-Carrier Absorption Process 252

9.4 Fundamental Absorption Process 256

9.5 The Photoconductivity Effect 264

9.6 The Photovoltaic (Dember) Effect 275

9.7 The Photomagnetoelectric Effect 277

Problems 281

References 283

Bibliography 283

10.Metal-Serniconductor Contacts 284

10.1 Introduction 284

10.2 Metal Work Function and Schottky Effect 285

10.3 Thermionic Emission Theory 288

10.4 Ideal Schottky Contact 290

10.5 Current Flow in a Schottky Diode 295

10.6 Cm:rent-Voltage Characteristics of a Si1icon and a GaAs Schottky Diode 300

10.7 Determination of Schottky Barrier Height 305

10.8 Enhancement of Effective Barrier Height 311

10.9 Applications of Schottky Diodes 319

10.10 Ohmic Contacts in Semiconductors 324

Problems 330

References 332

Bibliography 333

11.p-n Junction Diodes 334

11.1 Introduction 334

11.2 Equilibrium Properties of a p-n Junction Diode 335

11.3 p-n Junction Diode Under Bias Conditions 341

11.4 Minority Carrier Distribution and Current F1ow 344

11.5 Diffusion Capacitance and Conductance 351

11.6 Minority Carrier Storage and Transient Behavior 354

11.7 Zener and Avalanche Breakdowns 357

11.8 Tunnel Diodes 363

11.9 p-n Heterojunction Diodes 366

11.10 Junction Field-Effect Transistors 371

Problems 377

References 380

Bibliography 380

12.S

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书籍介绍

《半导体物理电子学(第2版)》全面介绍了半导体物理的基本内容，这些内容是理解半导体的物理性质和光电器件制备原理的基础。《半导体物理电子学(第2版)》系统性强，合理地安排了物理原理，表征法以及半导体材料和器件的应用等内容，兼顾了物理学家、材料学家和设备工程师的需求。《半导体物理电子学(第2版)》反映了半导体技术在过去十年的进步，包括许多新出现并已进入市场的半导体器件。